•  
  •  
 

Scanning Microscopy

Volume 8, Number 4 (1994)

Articles

PDF

Metastable Reconstructions on Si(111)
Y. -N. Yang and E. D. Williams

PDF

X-Ray Absorption Studies of Strain in Epitaxial (Si-Ge) Atomic Layer Superlattice and Alloy Films
T. Tyliszczak, A. P. Hitchcock, Z. H. Lu, J. -M. Baribeau, and T. E. Jackman

PDF

Recent Surface Studies Using Biassed Secondary Electron Imaging
Rajendra Persaud, Hisato Noro, Muhammad Azim, Robert H. Milne, and John A. Venables

PDF

Boron Reconstructed Si(111) Surfaces Produced by B2O3 Decomposition
J. Nogami, S. Yoshikawa, J. C. Glueckstein, and P. Pianetta

PDF

Dislocation Nucleation and Propagation in Semiconductor Heterostructures
D. Cherns, S. Mylonas, C. T. Chou, J. Wu, D. E. Ashenford, and B. Lunn

PDF

Surface Stress, Morphological Development, and Dislocation Nucleation During SixGe1-x Epitaxy
D. E. Jesson, S. J. Pennycook, J. -M. Baribeau, and D. C. Houghton

PDF

Predicting Relaxation in Strained Epitaxial Layers
R. Beanland, D. J. Dunstan, and P. J. Goodhew

PDF

ZnSe Heteroepitaxial Growth on Si (100) and GaAs (100)
D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L. -E. Swartz

PDF

Strain Relaxation in Graded InGaAs and InP Buffer Layers on GaAs (001)
K. Eberl, K. Häusler, T. Shitara, Y. Kershaw, and W. Sigle

PDF

Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures
Karen L. Kavanagh, Rachel S. Goldman, and Jessica C. P. Chang

PDF

Reflection High Energy Electron Diffraction (RHEED) Intensity Oscillations: Growth Modes and Growth Rates: A Critique
B. A. Joyce, X. M. Zhang, J. H. Neave, P. N. Fawcett, M. R. Fahy, K. Sato, and I. Kamiya

PDF

Balancing Surface Energy Terms for Stable Growth of Planar Surfaces
M. Albrecht, P. O. Hansson, S. Christiansen, W. Dorsch, H. P. Strunk, and E. Bauser

PDF

Transmission Electron Microscopy, High Resolution X-Ray Diffraction and Rutherford Backscattering Study of Strain Release in InGaAs/GaAs Buffer Layers
G. Salviati, L. Lazzarini, C. Ferrari, P. Franzosi, S. Milita, F. Romanato, M. Berti, M. Mazzer, A. V. Drigo, M. R. Bruni, M. G. Simeone, and N. Gambacorti

PDF

Bias Dependence of the Depletion Layer Width in Semi-Insulating GaAs by Charge Collection Scanning Microscopy
A. Castaldini, A. Cavallini, C. del Papa, M. Alietti, C. Canali, F. Nava, and C. Lanzieri

PDF

Reconstructions of C60 on the Ag(111)1x1 Surface
X. -D. Wang, S. Yamazaki, J. -L. Li, T. Hashizume, H. Shinohara, and T. Sakurai