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Scanning Microscopy

Volume 8, Number 4 (1994)

Articles

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Recent Surface Studies Using Biassed Secondary Electron Imaging
Rajendra Persaud, Hisato Noro, Muhammad Azim, Robert H. Milne, and John A. Venables

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Predicting Relaxation in Strained Epitaxial Layers
R. Beanland, D. J. Dunstan, and P. J. Goodhew

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ZnSe Heteroepitaxial Growth on Si (100) and GaAs (100)
D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L. -E. Swartz

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Balancing Surface Energy Terms for Stable Growth of Planar Surfaces
M. Albrecht, P. O. Hansson, S. Christiansen, W. Dorsch, H. P. Strunk, and E. Bauser

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X-Ray Absorption Studies of Strain in Epitaxial (Si-Ge) Atomic Layer Superlattice and Alloy Films
T. Tyliszczak, A. P. Hitchcock, Z. H. Lu, J. -M. Baribeau, and T. E. Jackman

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Reflection High Energy Electron Diffraction (RHEED) Intensity Oscillations: Growth Modes and Growth Rates: A Critique
B. A. Joyce, X. M. Zhang, J. H. Neave, P. N. Fawcett, M. R. Fahy, K. Sato, and I. Kamiya

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Metastable Reconstructions on Si(111)
Y. -N. Yang and E. D. Williams

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Boron Reconstructed Si(111) Surfaces Produced by B2O3 Decomposition
J. Nogami, S. Yoshikawa, J. C. Glueckstein, and P. Pianetta

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Dislocation Nucleation and Propagation in Semiconductor Heterostructures
D. Cherns, S. Mylonas, C. T. Chou, J. Wu, D. E. Ashenford, and B. Lunn

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Surface Stress, Morphological Development, and Dislocation Nucleation During SixGe1-x Epitaxy
D. E. Jesson, S. J. Pennycook, J. -M. Baribeau, and D. C. Houghton

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Bias Dependence of the Depletion Layer Width in Semi-Insulating GaAs by Charge Collection Scanning Microscopy
A. Castaldini, A. Cavallini, C. del Papa, M. Alietti, C. Canali, F. Nava, and C. Lanzieri

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Strain Relaxation in Graded InGaAs and InP Buffer Layers on GaAs (001)
K. Eberl, K. Häusler, T. Shitara, Y. Kershaw, and W. Sigle

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Transmission Electron Microscopy, High Resolution X-Ray Diffraction and Rutherford Backscattering Study of Strain Release in InGaAs/GaAs Buffer Layers
G. Salviati, L. Lazzarini, C. Ferrari, P. Franzosi, S. Milita, F. Romanato, M. Berti, M. Mazzer, A. V. Drigo, M. R. Bruni, M. G. Simeone, and N. Gambacorti

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Reconstructions of C60 on the Ag(111)1x1 Surface
X. -D. Wang, S. Yamazaki, J. -L. Li, T. Hashizume, H. Shinohara, and T. Sakurai

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Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures
Karen L. Kavanagh, Rachel S. Goldman, and Jessica C. P. Chang