All Physics Faculty Publications

Nanoscale oxide patterns on Si (100) surfaces

Document Type

Article

Journal/Book Title/Conference

Applied Physics Letters

Issue

66

Publication Date

1995

First Page

976

Last Page

978

Abstract

Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)‐2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4–10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.

https://doi.org/10.1063/1.113817

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