Class
Article
College
College of Engineering
Department
Electrical and Computer Engineering Department
Faculty Mentor
Hongjie Wang
Presentation Type
Poster Presentation
Abstract
The reliability of electric vehicle chargers is critical for the widespread adoption of EVs. To consumers, an indication of charging reliability is the unscheduled downtime of EV charging equipment. Unscheduled downtime brings the need for online EV health monitoring and remaining useful lifetime estimation technology. Though there are many different topologies and configurations for EV chargers, the core processing components remain the same. These components, known as silicon carbide MOSFETs, are important devices that provide better efficiency and power density than their silicon counterparts. In recent years, it is found that device on-resistance is a common indicator used in health monitoring and remaining useful lifetime estimation algorithms. Since SiC MOSFETs are relatively new, the necessary relationship between on-resistance and aging has not been fully understood and an experimental procedure for deriving the relationship has not been established. This thermal cycling testbed will be used to produce the data necessary to help increase EV charger reliability.
Location
Logan, UT
Start Date
4-11-2023 10:30 AM
End Date
4-11-2023 11:30 AM
Included in
Electric Vehicle Charger Reliability Study
Logan, UT
The reliability of electric vehicle chargers is critical for the widespread adoption of EVs. To consumers, an indication of charging reliability is the unscheduled downtime of EV charging equipment. Unscheduled downtime brings the need for online EV health monitoring and remaining useful lifetime estimation technology. Though there are many different topologies and configurations for EV chargers, the core processing components remain the same. These components, known as silicon carbide MOSFETs, are important devices that provide better efficiency and power density than their silicon counterparts. In recent years, it is found that device on-resistance is a common indicator used in health monitoring and remaining useful lifetime estimation algorithms. Since SiC MOSFETs are relatively new, the necessary relationship between on-resistance and aging has not been fully understood and an experimental procedure for deriving the relationship has not been established. This thermal cycling testbed will be used to produce the data necessary to help increase EV charger reliability.